Open AccessPeculiarities of electron emission from high-density deep levels of nanodefects in oxygen-implanted silicon
Author(s) -
Denis V. Danilov,
O. F. Vyvenko,
A. S. Loshachenko,
N. A. Sobolev
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1482/1/012003
Subject(s) - silicon , deep level transient spectroscopy , schottky diode , capacitance , materials science , semiconductor , acceptor , oxygen , electron , diode , atomic physics , chemistry , optoelectronics , condensed matter physics , physics , electrode , organic chemistry , quantum mechanics
The peculiarities of electron emission from electronic states of nanodefects formed at the early stages of oxygen precipitation in oxygen-implanted silicon annealed at 700°C were investigated with a combination of capacitance and current transient spectroscopy of the space charge region (SCR) in semiconductors. It was established that the particular properties of acceptor-like states are due to their high density and their localization at the back side of the implanted region. A model is suggested that explains an apparent emission rate slowdown and the appearance of an unexpected sign of capacitance relaxation signal as a result of the non-monotonic shape of the potential of the Schottky-diode.