Open AccessOptical studies of wide-bandgap HgCdTe material used in potential-and quantum-well structures
Author(s) -
D. A. Andryushchenko,
N. L. Bazhenov,
K. D. Mynbaev,
Н. Н. Михайлов,
V. G. Remesnik
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1482/1/012002
Subject(s) - band gap , molecular beam epitaxy , materials science , optoelectronics , photoluminescence , quantum well , wide bandgap semiconductor , epitaxy , optics , nanotechnology , physics , laser , layer (electronics)
Optical transmission and photoluminescence were used for the study of wide-bandgap (0.8-1.1 eV) HgCdTe (MCT) material grown by molecular-beam epitaxy. The material, including layers used as spacers and barriers in potential-and quantum-well structures, showed a considerable degree of alloy disorder similar to narrow-gap MCT grown by the same method. In some samples, defect states in the bandgap were found. Optimization of the growth technology for wide-bandgap material should help improving the quality of MCT-based potential-and quantum-well structures designed for various applications.