Open AccessElectron-photonic topological states on the surface of a bulk semiconductor driven by a high-frequency field
Author(s) -
O. V. Kibis,
Oleksandr Kyriienko,
I. A. Shelykh
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1461/1/012063
Subject(s) - semiconductor , brillouin zone , surface states , physics , condensed matter physics , dispersion (optics) , electron , photonics , field (mathematics) , gapless playback , coupling (piping) , phase (matter) , surface (topology) , materials science , quantum mechanics , geometry , mathematics , pure mathematics , metallurgy
It is shown theoretically that the strong coupling of electrons in a bulk gapless semiconductor (HgTe) to a circularly polarized high-frequency electromagnetic field induces topological states on the surface of the semiconductor. Their branches lie near the center of the Brillouin zone and have the Dirac dispersion. Thus, the light-induced topological phase transition in the semiconductor appears. The structure of the found surface states is studied both analytically and numerically in the broad range of their parameters.