Open AccessAuger recombination via deep energy levels as a potential cause of efficiency droop in InGaN/GaN LEDs
Author(s) -
A. A. Karpova,
D. M. Samosvat,
G. G. Zegrya
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1461/1/012061
Subject(s) - voltage droop , light emitting diode , optoelectronics , auger effect , materials science , auger , recombination , wide bandgap semiconductor , physics , atomic physics , chemistry , voltage , biochemistry , quantum mechanics , voltage divider , gene
In the present work a mechanism of nonradiative radiation via deep energy levels is considered for InGaN/GaN LEDs from the first principles. The coefficient and time of such Auger recombination are evaluated numerically and are shown to be enough for causing the efficiency droop in blue and green InGaN/GaN LEDs.