Open AccessThe dependence of the exciton binding energies on quantum well widths of the donor doped GaAs/AlGaAs QW influencing on the intersubband transition
Author(s) -
Paphavee van Dommelen,
Kanothai Jarusirirangsi
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1461/1/012058
Subject(s) - exciton , binding energy , quantum well , condensed matter physics , doping , alloy , biexciton , conduction band , materials science , chemistry , atomic physics , physics , optics , electron , quantum mechanics , laser , composite material
In this research, we theoretically investigated the exciton binding energies as a function of QW widths with the variation of the percent alloy contents. For any certain percent of alloy contents, the exciton binding energies increase proportionally with the increasing of QW widths. We also simulated the exciton binding energies as a function of the percent alloy contents of Al x Ga 1-x As barrier with the variation of QW widths. For the narrower QW widths, with any certain percent of alloy contents, the exciton binding energies show higher discrete energy characteristic compared with the wider well widths. These results can explain the intersubband transition with MIR and Far-IR emission between donor doped levels in conduction band.