Open AccessTight-binding based modeling to demonstrate metal-insulator transition in VO2 within Mott-Hubbard picture
Author(s) -
G. R. Liyana,
Angga Dito Fauzi,
Muhammad Aziz Majidi
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1442/1/012013
Subject(s) - hubbard model , condensed matter physics , mott transition , metal–insulator transition , hamiltonian (control theory) , strongly correlated material , ferromagnetism , physics , mott insulator , electronic correlation , tight binding , renormalization group , electron , electronic structure , quantum mechanics , superconductivity , electrical resistivity and conductivity , mathematical optimization , mathematics