Open AccessSemiconductor heterosystem InAs-ZnS. Physical and chemical properties
Author(s) -
I. A. Kirovskaya,
Е. В. Миронова,
I. Yu. Umanskiy,
А. О. Ekkert,
R. V. Ekkert,
E. N. Kopylova,
А. И. Блесман,
D. A. Polonyankin,
В. Б. Гончаров
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1441/1/012007
Subject(s) - sphalerite , semiconductor , materials science , diffusion , isothermal process , solid solution , zinc sulfide , chemical physics , chemistry , thermodynamics , optoelectronics , zinc , metallurgy , physics , pyrite
According to the developed methodology based on isothermal diffusion of the initial binary compounds (InAs, ZnS) in the light of their known bulk properties, the InAs-ZnS system solid solutions have been obtained. Pursuant to the results of the X-ray investigation, they have been certified as substitutional solid solutions with the cubic sphalerite structure. The surface (acid-base) properties of the InAs-ZnS system components corresponding to the weak acidic area have been studied. Consistent patterns in changes with the composition of the studied properties have been established, which are both statistical (smooth) and extreme. Correlations between the consistent patterns and, respectively, the link between surface and bulk properties, which allow predicting the desired materials for the semiconductor gas analysis have been found.