Open AccessE-beam longitudinal pumped semiconductor laser based on ZnCdS/ZnSSe type-II multi quantum well structure
Author(s) -
M. R. Butaev,
V. I. Kozlovsky,
D. A. Sannikov,
Ya. K. Skasyrsky
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1439/1/012017
Subject(s) - lasing threshold , heterojunction , optoelectronics , quantum well , materials science , laser , molecular beam epitaxy , semiconductor , epitaxy , substrate (aquarium) , beam (structure) , optics , nanotechnology , physics , wavelength , oceanography , layer (electronics) , geology
A ZnCdS/ZnSSe multi quantum well structure was grown by metal-organic vapor phase epitaxy on GaAs substrate. The structure is consisted of the 45 ZnCdS layers of 5 nm in thickness separated by the 100 nm thin ZnSSe barrier layers and was the type-II heterostructure. A microresonator was produced from this structure for scanning electron beam longitudinal pumping. Lasing with output power up to 2W at 478 nm was achieved at room temperature.