Open AccessCarrier-wave population transfer in semiconductors
Author(s) -
Ruixin Zuo,
Song Xia,
Torsten Meier,
Weifeng Yang
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1412/8/082005
Subject(s) - semiconductor , polarization (electrochemistry) , physics , coupling (piping) , population , condensed matter physics , materials science , optoelectronics , chemistry , demography , sociology , metallurgy
Synopsis We show that a novel carrier-wave population transfer, i.e., interband excitations are confined to an extremely short time window due to their coupling to the intraband motion, is responsible for the enhancement of the interband HHG and the anomalous carrier-envelope phase dependence observed in recent experiments on semiconductors. The results give the answers of how inter- and intraband dynamics are coupled together and why the interband polarization can dominate the HHG emission in many semiconductors which is a highly debated topic in the community.