Open AccessRevision of optical property of silicon by a reverse Monte Carlo analysis of reflection electron energy loss spectroscopy spectra
Author(s) -
Liguang Yang,
K. Tőkési,
J. Tóth,
Bo Da,
Zejun Ding
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1412/20/202026
Subject(s) - electron energy loss spectroscopy , spectroscopy , reflection (computer programming) , monte carlo method , atomic physics , excitation , spectral line , electron , silicon , electron spectroscopy , energy dispersive x ray spectroscopy , scattering , photon , physics , materials science , optics , optoelectronics , diffraction , mathematics , quantum mechanics , computer science , statistics , programming language
Synopsis The energy loss function (ELF) of silicon in a wide photon energy region (0-200 eV) was derived from reflection electron energy loss spectroscopy spectra with a theoretical analysis of the measured data. The accuracy of our result was justified by using the f- and ps-sum rules. Based on the new ELF, individual contributions of surface excitation and the bulk excitation to the REELS spectrum have been separated, and multi-scattering effect in the reflection electron energy loss spectroscopy spectrum has been studied in detail.