Open AccessStrength and structural properties of AlN films grown on SiC/Si substrates synthesized by atomic substitution
Author(s) -
А. С. Гращенко,
С. А. Кукушкин,
А. В. Осипов
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012244
Subject(s) - materials science , substrate (aquarium) , atomic force microscopy , heterojunction , composite material , nanoindentation , ellipsometry , morphology (biology) , indentation hardness , crystallography , thin film , optoelectronics , nanotechnology , microstructure , chemistry , oceanography , geology , biology , genetics
In the present work, we studied the strength and structural characteristics of the layers of the AlN/SiC/Si heterostructure. The surface morphology of the AlN film and the SiC/Si substrate was studied using atomic force microscopy. The thickness of the AlN and SiC layers was determined by analyzing the data of ellipsometry. The hardness of the films and the substrate was measured by the method of nanoscratch testing. It was experimentally shown that the films under study have a high crystalline quality.