Open AccessSimulation of quantum transport in doped carbon nanotube diode controlled by transverse electric field
Author(s) -
D. A. Timkaeva,
Renat T. Sibatov
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012239
Subject(s) - carbon nanotube , electric field , doping , diode , materials science , transverse plane , optoelectronics , quantum , field (mathematics) , condensed matter physics , physics , nanotechnology , quantum mechanics , engineering , mathematics , structural engineering , pure mathematics
Using first-principle and semi-empirical methods, optical responses and transport characteristics of hybrid CNT-based diodes are studied. The junction is realized by a combination of doping of one half of a nanotube and applying a transverse electric field to the other. Calculations are carried out in the framework of the density functional theory and the nonequilibrium Green function method. The possibility of using these rectifiers in optical nanoantennas is discussed.