Open AccessEffect of crystal orientation on the implant profile and resistance of SiC
Author(s) -
В. И. Егоркин,
A. V. Nezhentsev,
V. E. Zemlyakov,
В. А. Гудков,
V. I. Garmash
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012219
Subject(s) - materials science , silicon carbide , ion implantation , doping , recrystallization (geology) , silicon , ion , crystallography , crystal (programming language) , crystal structure , carbide , lattice (music) , optoelectronics , composite material , chemistry , paleontology , organic chemistry , computer science , biology , programming language , physics , acoustics
The process of ion implantation into silicon carbide is studied in this paper. We conducted an analysis of acceptor distribution profiles. We determined that silicon carbide layers with an orientation (11–20) have a higher degree of crystal lattice recovery after ion implantation with aluminum ions than a crystal lattice with an orientation (0001). A significantly higher efficiency of ion doping of silicon carbide with an orientation (11–20) was shown, which may indicate a more efficient recrystallization of the fastest growing crystallographic direction. We have established a higher degree of restoration of the crystal lattice of silicon carbide implants with an orientation (11–20) after implantation. Highly doped SiC p-layers were obtained with a specific resistance of about 0.02 Ohm*cm and with high crystalline structure quality without the use of ultra-large implantation doses. The minimum value of Rs for orientation (0001) is about 10 k Ω/□, and for orientation (11-20) - 2.7 k Ω/□.