Open AccessInvestigation of the piezoresistive properties and temperature coefficient of resistance of epitaxial GaN layers for applications in MEMS and thermal flow sensors
Author(s) -
A Kazakin,
Yakov Enns,
A. M. Mizerov,
R Kleimanov,
A. D. Bouravleuv
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012214
Subject(s) - piezoresistive effect , materials science , gauge factor , microelectromechanical systems , anemometer , molecular beam epitaxy , optoelectronics , temperature coefficient , sapphire , epitaxy , composite material , turbulence , optics , mechanics , fabrication , medicine , laser , alternative medicine , physics , pathology , layer (electronics)
The paper presents the results of an experimental determination of the piezoresistive gauge factor and temperature coefficient of resistance of a GaN films grown by molecular beam epitaxy on sapphire substrates. The measured values were used to calculate the design and characteristics of the GaN hot-wires anemometer for the MEMS gas flow sensor.