Open AccessEffect of oxygen on the properties of Ga2O3:Si thin films
Author(s) -
А. V. Аlmaev,
Е. V. Chernikov,
Bogdan O. Kushnarev,
Nikita Yakovlev
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012201
Subject(s) - gallium , oxygen , thin film , materials science , sputter deposition , oxide , analytical chemistry (journal) , sputtering , chemistry , nanotechnology , metallurgy , environmental chemistry , organic chemistry
The results of studies of electrical and gas-sensitive characteristics of thin films Ga 2 O 3 :Si on exposure to oxygen in the range from 0 to 100 vol. % and operating temperatures from 25 to 700 °C were presented. Samples were obtained by HF magnetron sputtering. The possibility of developing low-temperature oxygen sensors was shown. A model of oxygen interaction with Ga 2 O 3 :Si films was proposed. The mechanism of Si influence on gas-sensitive properties of thin films of gallium oxide was proposed.