Open AccessPeculiarities of the electronic transport in topological materials of Bi2Se3 and MoxW1-xTe2 (x = 0; 0.5; 1)
Author(s) -
V. V. Chistyakov,
A. N. Domozhirova,
Jung-Chun Andrew Huang,
С. В. Наумов,
В. В. Марченков
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012199
Subject(s) - topological insulator , electrical resistivity and conductivity , materials science , semimetal , condensed matter physics , single crystal , conductivity , bismuth , topology (electrical circuits) , crystallography , physics , chemistry , band gap , optoelectronics , mathematics , metallurgy , quantum mechanics , combinatorics
The electrical resistivity of thin films of a topological insulator of Bi 2 Se 3 with a thickness of 10 nm to 75 nm, single crystal of Bi 2 Se 3 with thickness of 0.65 mm and single crystals of topological Weyl semimetals Mo x W 1-x Te 2 (x = 0; 0.5; 1) in the temperature range from 4.2 to 300 K was measured. A size effect in the electrical conductivity of Bi 2 Se 3 films was observed, i.e. linear dependence of the conductivity of the film on its reciprocal thickness. It is suggested the existence of two different conduction channels in the Mo 0.5 W 0.5 Te 2 compound.