Open AccessDetermation of dV/dt values for domestic SiC Schottky diodes
Author(s) -
Sergey Sedykh,
S. B. Rybalka,
Alexandr Drakin,
A.M. Demidov,
E. A. Kulchenkov
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012195
Subject(s) - schottky diode , diode , silicon carbide , materials science , voltage , optoelectronics , impulse (physics) , amplitude , step recovery diode , electrical engineering , optics , physics , engineering , quantum mechanics , metallurgy
In this study the dV/dt values for 4H-SiC commercial diodes have been determined experimentally. The experimental measuring tester for determination of dV/dt values of diodes at amplitude of impulse of reverse voltage V A (V A =100÷950 V) applied across the Schottky diode was constructed. It was determined that the dV/dt value almost linearly increase with increase of impulse of reverse voltage V A (in interval of V A =100÷900 V) applied across the 5DS402A9 diode for the first time. It is determined experimentally that at the maximal impulse of reverse voltage (900 V) applied across the silicon carbide commercial 5DS402A9 diode produced by domestic company the dV/dt value (148 V/ns) is comparable with others commercial diodes and therefore diode of this type can stably function in electric power circuit.