Open AccessQuantum-mechanical models for calculating the electrical characteristics of semiconductor 2-d structures for technological optimization of nanoelectronics devices based on them
Author(s) -
A. A. Koziy,
Н. А. Ветрова,
K. P. Pchelintsev,
В. Д. Шашурин,
С. А. Мешков
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012194
Subject(s) - nanoelectronics , scalability , terahertz radiation , electronic engineering , semiconductor , semiconductor device , diode , computer science , quantum , materials science , optoelectronics , nanotechnology , physics , engineering , quantum mechanics , layer (electronics) , database
In this paper, a computational algorithm has been developed for the quantum-mechanical model for predicting the electrical properties of 2-d semiconductor structures of nanoelectronics devices with a low-dimensional channel. The most important advantage of the developed algorithm is its scalability for the problems of technological optimization of nanoelectronics devices. An example of application of the developed software to solving the problem of predicting the electrical properties of a low barrier detector sub-terahertz diode with zero-bias in the framework of solving the problem of its technological optimization is presented.