Open AccessIncreasing efficiency of GaN HEMT transistors in equipment for radiometry using numerical simulation
Author(s) -
В. Г. Тихомиров,
А. Г. Гудков,
S. V. Agasieva,
D. D. Dynaiev,
M. M. Popov,
S. V. Chizhikov
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012191
Subject(s) - high electron mobility transistor , heterojunction , optoelectronics , materials science , transistor , gallium nitride , process (computing) , electronic engineering , computer science , electrical engineering , nanotechnology , engineering , voltage , layer (electronics) , operating system
The numerical impact modeling of some external effects on devices based on AlGaN/GaN heterostructures (HEMT) was carried out. The mathematical model was created that allowed to predict the behavior of the drain current depending on condition changes in the heterostructure in the buffer region and to start the process of directed construction optimization of the devices based on AlGaN/GaN HEMT with the aim of improving their performances.