Open AccessInvestigation of optical properties of In(Ga)As/GaAs mesa structures with active region based on quantum wells, quantum dots, and quantum well-dots
Author(s) -
Anna Dragunova,
N. V. Kryzhanovskaya,
M. V. Maximov,
S. A. Mintairov,
N. A. Kalyuzhnyy,
E. I. Moiseev,
I. S. Mukhin,
В. Г. Тихомиров,
A. E. Zhukov
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012157
Subject(s) - quantum dot , mesa , quantum well , photoluminescence , optoelectronics , gallium arsenide , materials science , quantum point contact , excitation , physics , laser , optics , quantum mechanics , computer science , programming language
In this work photoluminescence (PL) of mesa-structures that contain three different types of active regions based on InGaAs/GaAs quantum wells (QWs), InAs/InGaAs/GaAs quantum dots (QDs) and InGaAs/GaAs quantum well-dots(QWD) is studied. Comparative analysis of the PL intensity obtained at different temperatures and optical excitation powers on mesa diameter is done.