Open AccessTowards an efficient light-emitting source based on self-implanted silicon with dislocation-related luminescence
Author(s) -
Д. С. Королев,
Aleikolskaya,
А. Н. Терещенко,
A. N. Mikhaylov,
А. И. Белов,
D. I. Tetelbaum
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012152
Subject(s) - luminescence , boron , annealing (glass) , materials science , silicon , dislocation , ion , irradiation , optoelectronics , analytical chemistry (journal) , metallurgy , chemistry , composite material , nuclear physics , physics , organic chemistry , chromatography
The regularities of ion synthesis of dislocation-related luminescence centers in silicon have been investigated. By varying the conditions of additional irradiation with boron ions, as well as the conditions of subsequent annealing, we obtain an increase in the luminescence intensity, as well as a shift of maximum of the temperature dependence towards higher temperatures. It was found for the first time that, for the highest used dose of boron ions (3·10 17 cm -2 ) and additional heat treatment at 830 °C, it is possible to get the measurable luminescence at room temperature.