Open AccessInfluence of neutron irradiation on optoelectronic properties of structures with the InAs/GaAs quantum dots
Author(s) -
Н. С. Волкова,
А. П. Горшков,
А. Н. Труфанов,
Л. А. Истомин,
S. Levichev
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012137
Subject(s) - photosensitivity , irradiation , quantum dot , materials science , neutron , neutron irradiation , optoelectronics , fluence , layer (electronics) , condensed matter physics , physics , nanotechnology , nuclear physics
The effect of neutron irradiation on the photosensitivity of the InAs/GaAs quantum dots has been investigated. It was shown that after neutron irradiation with a fluence of 1.5×10 15 cm -2 the photosensitivity at the room temperature has been decreased at 3 times, whereas the shape of the photosensitivity’s temperature dependence didn’t reveal any visible changes, despite an appearance of defects in quantum dot layer. The effect was explained by the difficulty of a motion of photoexcited carriers in quantum dot layer to the recombination centres arised after irradiation.