Open AccessDirect GaInP-to-Ge optical interaction in the triple-junction solar cells with thinned intermediate GaAs subcell
Author(s) -
S. A. Levina,
E D Filimonov,
M. A. Mintairov,
М. Z. Shvarts
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012114
Subject(s) - materials science , optoelectronics , triple junction , coupling (piping) , band gap , photonics , luminescence , blocking (statistics) , metallurgy , statistics , mathematics
In the present work processes of direct light coupling in the triple-junction solar cells between top GaInP (wide band gap) and bottom Ge (narrow band gap) subcells are considered, when parameters of intermediate optical medium (comprised of middle GaAs p-n junction layers) are changed. Conditions of luminescent coupling gain and blocking are studied in multijunction structures with selectively tuned built-in photonic structures such as Bragg reflectors. An ability to manage the efficiency of optical interaction between subcells is investigated.