Open AccessTemperature performance of InGaAs/InGaAlAsTemperature performance of InGaAs/InGaAlAs laser diodes with δ-doping active region
Author(s) -
S. S. Rochas,
I. I. Novikov,
A. G. Gladyshev,
E. S. Kolodeznyi,
M. V. Maximov,
F. I. Zubov,
Yu. M. Shernyakov,
L. Ya. Karachinsky,
A. E. Zhukov,
Д. В. Денисов,
A. Yu. Egorov
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012104
Subject(s) - optoelectronics , diode , materials science , heterojunction , laser , doping , quantum well , current density , optics , physics , quantum mechanics
The optical gain performance of 1530-1565 nm laser diodes with active regions containing p-doped barrier layers has been investigated. We have studied the threshold current density and differential quantum efficiency in wide temperature range and compared modal gain behaviour of laser diodes made of heterostructure with delta-doped barrier layers by carbon at level of 10 12 cm -2 and heterostructure with undoped barrier layers.