Open AccessExperimental study of power-limiting factors of 1.1 μm range edge-emitting lasers based on InGaAs/GaAs quantum well-dot nanostructures
Author(s) -
A. A. Serin,
A. S. Payusov,
G. O. Kornyshov,
Yu. M. Shernyakov,
S. A. Mintairov,
N. A. Kalyuzhnyy,
M. M. Kulagina,
A. E. Zhukov,
N. Yu. Gordeev,
M. V. Maximov
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012100
Subject(s) - optoelectronics , laser , materials science , lasing threshold , quantum well , overheating (electricity) , quantum dot , quantum dot laser , semiconductor laser theory , optics , semiconductor , physics , quantum mechanics , wavelength
We present a study of high-power characteristics of edge-emitting lasers based on quantum well-dots (QWD) in a pulsed regime. QWD-based lasers with 2 and 5 active layers emitting at ∼1.1 μm provided maximal optical power of 39 W limited by the pulse current source available. We have investigated the lasing spectra and shown that under the injection current above 20 kA/cm 2 the active region overheats approximately by 0.5°C per 1 kA/cm 2 during 100 ns current pulse. The active region overheating correlates well with the reducing of the differential efficiency of our devices. We believe that maximal pulse optical power of the QWD-based lasers is limited mainly by our laser wafer design rather than by the QWD active media properties.