Open AccessSpectral analysis of the electroluminescence and photoresponse of heterostructures with InGaAs quantum objects
Author(s) -
R. A. Salii,
V. V. Evstropov,
S. A. Mintairov,
M. A. Mintairov,
М. Z. Shvarts,
N. A. Kalyuzhnyy
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012099
Subject(s) - heterojunction , electroluminescence , optoelectronics , metalorganic vapour phase epitaxy , quantum dot , wetting layer , materials science , epitaxy , solar cell , spectral line , quantum efficiency , photon , absorption (acoustics) , quantum yield , layer (electronics) , optics , physics , nanotechnology , fluorescence , astronomy , composite material
In this work, physical and optical properties of In 0.8 Ga 0.2 As quantum dots (QDs) embedded in the structure of a single-junction GaAs solar cell (SC) grown by MOVPE technique were investigated using spectral characteristics of external quantum yield (EQE) and electroluminescence (EL). It has been found that, in characterizing QD physical parameters, simplified model of a thin stressed quantum well can be applied to a wetting layer (WL). It has been demonstrated that the EL spectra allows determining the absorption energy of photons in WL and QDs more accurately compared to the EQE spectra. Energies of “E e -E hh ” and “E e -E lh ” transitions in WL have been determined and were 1.325 eV and 1.388 eV respectively. The calculated values of the WL thickness (5.63 Å) and In composition of QDs (xIn = 80%) coincide with the technological parameters used in the epitaxial growth of the device.