Open AccessRelation between energy gap and saturation currents in GaInAs homo p-n junctions
Author(s) -
M. A. Mintairov,
V. V. Evstropov,
S. A. Mintairov,
М. Z. Shvarts,
N. A. Kalyuzhnyy
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012097
Subject(s) - saturation current , saturation (graph theory) , band gap , condensed matter physics , photodetector , optoelectronics , wavelength , exponential function , recombination , physics , materials science , voltage , chemistry , mathematics , quantum mechanics , mathematical analysis , biochemistry , combinatorics , gene
The paper is devoted to the relationship between the energy gap and the saturation currents (diffusion and recombination ones) of GaInAs homo p–n junctions. Such a relationship is required for developing multi-junction solar cells and photodetectors for a given wavelength. The saturation currents and the energy gap have been determined experimentally, and an empirical exponential formula was obtained for the required relationship. The results of the work allow predicting the saturation current for a GaInAs p-n junction with a given energy gap.