Open AccessMeasurement and analysis of the recombination coefficients distribution on the area of light-emitting InGaN/GaN heterostructures
Author(s) -
I. V. Frolov,
О. А. Radaev,
В. А. Сергеев
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012092
Subject(s) - light emitting diode , heterojunction , materials science , optoelectronics , recombination , gallium nitride , current density , optics , physics , nanotechnology , chemistry , layer (electronics) , biochemistry , quantum mechanics , gene
A method and an installation for evaluation the profile of distribution of recombination coefficients and current density over the area of light-emitting heterostructures at low injection levels based on local values of the 3 dB frequency are described. Using the example of measuring the parameters of commercial blue InGaN/GaN-based LEDs, it is shown that the current density is higher in those areas of the chip where the 3 dB frequency is lower.