Measurement and analysis of the recombination coefficients distribution on the area of light-emitting InGaN/GaN heterostructures | Zendy

I. V. Frolov | Zendy; O A Radaev | Zendy; В. А. Сергеев | Zendy

Open Access

Measurement and analysis of the recombination coefficients distribution on the area of light-emitting InGaN/GaN heterostructures

Author(s) -

I. V. Frolov,

O A Radaev,

В. А. Сергеев

Publication year - 2019

Publication title -

journal of physics conference series

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 85

eISSN - 1742-6596

pISSN - 1742-6588

DOI - 10.1088/1742-6596/1410/1/012092

Subject(s) - light emitting diode , heterojunction , materials science , optoelectronics , recombination , gallium nitride , current density , optics , physics , nanotechnology , chemistry , layer (electronics) , biochemistry , quantum mechanics , gene

A method and an installation for evaluation the profile of distribution of recombination coefficients and current density over the area of light-emitting heterostructures at low injection levels based on local values of the 3 dB frequency are described. Using the example of measuring the parameters of commercial blue InGaN/GaN-based LEDs, it is shown that the current density is higher in those areas of the chip where the 3 dB frequency is lower.

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