Open AccessPhotovoltaic properties of InP NWs/p-Si heterostructure
Author(s) -
K. P. Kotlyar,
А. В. Вершинин,
R. R. Reznik,
Sergei I. Pavlov,
D. A. Kudryashov,
K. S. Zelentsov,
А. М. Можаров,
Alexey Karaborchev,
I. S. Mukhin,
I. P. Soshnikov,
G. É. Cirlin
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012060
Subject(s) - materials science , heterojunction , optoelectronics , photovoltaic system , nanowire , substrate (aquarium) , short circuit , silicon , open circuit voltage , current density , layer (electronics) , voltage , nanotechnology , electrical engineering , engineering , oceanography , physics , quantum mechanics , geology
The experimental and modelling results of the investigation of photovoltaic properties of the InP nanowires grown on p-Si substrate are presented. It is shown that InP 2D-layer between nanowires on Si is II-type heterojanction. The resulting structure exhibits an open-circuit voltage (Voc) of 0,37 V, a short-circuit current density (Jsc) of 10.6 mA/cm2, a fill factor (FF) of 0.61 and efficiency of 2.4% at 1 sun. The InP/p-Si structure can be applied as prototype for solar cells or the photosensitive component in an integrated circuit based on silicon technology.