Open AccessModeling the formation of InP/GaxIn1-xP axial nanowire heterostructures
Author(s) -
A. A. Koryakin,
Egor D. Leshchenko,
V. G. Dubrovskiı̆
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012058
Subject(s) - heterojunction , nanowire , materials science , radius , monolayer , condensed matter physics , optoelectronics , nanotechnology , physics , computer security , computer science
A model is developed to depict the formation of InP/Ga x In 1 - x P axial heterostructures in self-catalyzed Ga x In 1 - x P nanowires. The composition profiles of the InP/Ga x In 1 - x P axial heterostructure are calculated taking into account elastic stresses. It is shown that the InP/Ga x In 1 - x P axial heterojunction width at the growth temperature of 450°C is larger than 12 monolayers for nanowires with the radius larger than 10 nm. Also, the comparison with Ga x In 1 - x As system is performed and reveals that the InP/Ga x In 1 - x P axial heterojunction width is approximately two times smaller than the InAs/Ga x In 1 - x As axial heterojunction width.