Open AccessZnO thin films synthesis by RF magnetron sputtering deposition
Author(s) -
V. O. Gridchin,
K. P. Kotlyar,
А. В. Вершинин,
N. V. Kryzhanovskaya,
E. V. Pirogov,
Andriy Semenov,
P. Yu Belyavskiy,
A. V. Nashchekin,
G. É. Cirlin,
I. P. Soshnikov
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012054
Subject(s) - materials science , thin film , sputter deposition , photoluminescence , transmittance , absorption edge , refractive index , analytical chemistry (journal) , sputtering , absorption (acoustics) , absorption spectroscopy , deposition (geology) , optoelectronics , grain size , band gap , optics , composite material , nanotechnology , chemistry , paleontology , sediment , physics , chromatography , biology
Investigation of ZnO thin films synthesis using RF magnetron sputtering deposition in the Ar/O 2 plasma gas mixture at different O 2 composition and at different growth temperatures is presented. The effect growth process on structural (morphology and orientation films, grain sizes, lattice parameters) and optical (transmittance, absorption, refractive index, photoluminescence) properties are examined. It is shown that synthesized ZnO thin films at a temperature from 200 to 300 °C are polycrystal and textured. Notice that ZnO thin films, which are synthesized using pure Ar plasma gas, are porosity. The optical transmittance and absorption spectra have an absorption edge near 380 nm. The PL spectra of synthesized ZnO films show exciton peaks at 370-400 nm and the wide emission at the yellow and red spectral regions.