Open AccessFabrication and luminescent properties of(In,Fe)Sb/GaAs/InGaAs diodes
Author(s) -
M. V. Ved,
М. В. Дорохин,
В. П. Лесников,
A. V. Zdoroveyshchev,
Yu. A. Danilov,
П. Б. Демина,
А. В. Кудрин
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012053
Subject(s) - electroluminescence , materials science , optoelectronics , luminescence , diode , injector , fabrication , light emitting diode , layer (electronics) , polarization (electrochemistry) , quantum well , gallium arsenide , optics , nanotechnology , laser , chemistry , mechanical engineering , medicine , alternative medicine , physics , pathology , engineering
The electrical and luminescent characteristics of InGaAs/GaAs spin light-emitting diodes with an injector based on (In,Fe)Sb were investigated and the circular polarization of the electroluminescence was obtained for such structure. It has been established that the deposition of (In,Fe)Sb layer does not introduce any additional defects into the region of near-surface quantum wells, but directly affects the (In,Fe)Sb/GaAs interface. It was found that the application of a thin protective layer of MgO between the ferromagnetic (In,Fe)Sb injector and the light-emitting structure minimizes this effect.