Open AccessXPS analysis of metallic wetting layer in In/GaAs system obtained at different growth temperatures
Author(s) -
M. M. Eremenko,
С. В. Балакирев,
N. E. Chernenko,
O A Ageev,
М. С. Солодовник
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012045
Subject(s) - wetting , wetting layer , x ray photoelectron spectroscopy , nucleation , materials science , layer (electronics) , nanostructure , metal , impurity , epitaxy , deposition (geology) , analytical chemistry (journal) , nanotechnology , chemical engineering , metallurgy , composite material , chemistry , paleontology , organic chemistry , chromatography , sediment , engineering , biology
In this paper we investigate the processes of nucleation and growth of In/GaAs(001) nanostructures by droplet epitaxy. We determined the temperature dependence of the wetting layer thickness. Using the X-ray photoelectron spectroscopy technique to examine of samples with In/GaAs droplet nanostructures formed under different conditions we experimentally confirm an increase in the metallic wetting layer thickness with a decrease in the deposition temperature. Analysis of the data obtained shows that droplet nanostructures consist of In are without Ga impurity.