
Formation of SiO2 buffer layer for LiNbO3 thin films growth
Author(s) -
З. Е. Вакулов,
В. С. Климин,
A A Rezvan,
R. V. Tominov,
Ksenia Korzun,
И. Н. Коц,
V. V. Polyakova,
O A Ageev
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012042
Subject(s) - buffer (optical fiber) , materials science , layer (electronics) , nanocrystalline material , piezoelectricity , surface roughness , deposition (geology) , thin film , pulsed laser deposition , surface finish , grain size , optics , composite material , optoelectronics , nanotechnology , biology , paleontology , physics , sediment , telecommunications , computer science
This paper shows the results of study of the effect of SiO 2 buffer layer thickness on the morphological parameters of nanocrystalline LiNbO 3 films formed by pulsed laser deposition. It has been established that with increasing in the thickness of SiO 2 buffer layer from 10 nm to 50 nm, the roughness of LiNbO 3 films decreases from 5.1 nm to 4.4 nm. The minimum value of the grain diameter (118 nm) corresponds to the thickness of the buffer layer equal to 50 nm. The results obtained can be used in the design and manufacture of integrated acousto-optic and piezoelectric devices, as well as sensitive elements of sensors using various effects of surface acoustic waves.