Open AccessApplication of the atomic layer etching technique for the formation of SiC-based field emitters
Author(s) -
В. С. Климин,
И. Н. Коц,
R. V. Tominov,
A A Rezvan,
Yu. N. Varzarev,
O A Ageev
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012041
Subject(s) - etching (microfabrication) , materials science , silicon carbide , silicon , plasma etching , layer (electronics) , nanoscopic scale , reactive ion etching , scanning electron microscope , graphene , ion beam , ion , isotropic etching , optoelectronics , nanotechnology , composite material , chemistry , organic chemistry
This paper presents the technology of obtaining graphene films on the surface of SiC using a combination of methods of focused ion beams and plasma-chemical etching in a fluorine containing environment. For the formation of nanoscale structures with lateral dimensions of 280 nm, the method of focused ion beams was used. Nano sized structures were formed on the surface of silicon carbide by an ion beam, which were subsequently placed in the reactor. In the reactor, the structures on silicon carbide were processed in fluoride plasma. The depth of the structures was 900 nm. SF6 was used for atomic layer etching operations. The study of the surface topology at each iteration was carried out using scanning electron microscopy. Electrical characteristics were measured by atomic force microscopy.