Open AccessSubstrate-removed flip-chip photodiode array based on InAsSbP/InAs double heterostructure
Author(s) -
S. A. Karandashev,
A. A. Klimov,
R. E. Kunkov,
A. A. Lavrov,
T. S. Lukhmyrina,
B. A. Matveev,
M. A. Remennyĭ,
A. A. Usikova
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012028
Subject(s) - photodiode , optoelectronics , materials science , heterojunction , substrate (aquarium) , electroluminescence , double heterostructure , flip chip , semiconductor , nanotechnology , layer (electronics) , oceanography , semiconductor laser theory , adhesive , geology
N- InAsSbP/InAs /P- InAsSbP double heterostructures have been grown onto n + -InAs substrate and further processed into 2×2 photodiode array containing no n + - InAs. C-V, spectral response as well as mid-IR photoluminescence and electroluminescence in the 77-300 K temperature range have been measured and used for photodiode characterization including D*(λ) and BLIP temperature evaluation.