Open AccessAtomic layer etching of Silicon Oxide
Author(s) -
V. O. Kuzmenko,
A. V. Miakonkikh,
К. В. Руденко
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012023
Subject(s) - etching (microfabrication) , silicon , silicon oxide , reactive ion etching , materials science , oxide , layer (electronics) , atomic layer deposition , argon , deposition (geology) , plasma etching , plasma , analytical chemistry (journal) , fluorocarbon , oxygen , buffered oxide etch , polymer , nanotechnology , optoelectronics , chemistry , composite material , metallurgy , organic chemistry , silicon nitride , paleontology , physics , quantum mechanics , sediment , biology
The atomic layer etching process for Silicon oxide is studied. The process consists of deposition step and activation step separated by pumping and purging steps. The deposition step is performed in C4F8 plasma and produces a polymer fluorocarbon film with 0.2-3 nm thickness. Then activation step is performed in Argon or Oxygen plasma with DC bias applied to the waferholder. Accelerated ions enhance reaction of fluorine atoms of the polymer film with underlaying Silicon oxide which leads to controllable saturated etching.