Open AccessStructure of V-defects in a-GaN films grown on r-sapphire substrate
Author(s) -
A. Й. Савчук,
Yu Akhmerov,
Alexander A. Chelny,
O. R. Abdullaev,
Oleg Rabinovich,
Michail Mezhenny,
A. Zharkova,
A. Aluyev,
M. Zakusov,
N. Kourova,
В. Н. Мурашев,
S. Didenko
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012022
Subject(s) - metalorganic vapour phase epitaxy , sapphire , materials science , substrate (aquarium) , optoelectronics , atomic force microscopy , composite material , nanotechnology , epitaxy , optics , layer (electronics) , laser , oceanography , physics , geology
The a-GaN films were successfully grown on the r-sapphire substrate by MOCVD method. The structure of V-defects was investigated by AFM and SEM. The dependence of V-defects density on growth temperature of a-GaN film at a constant hydrogen flow through a TEG source was studied. The influence of V/III ratio on V-defects structure was investigated. Methods of V-defects density minimisation were purposed.