Open AccessMicrolasers based on GaAs and Si
Author(s) -
A. E. Zhukov,
M. V. Maximov,
N. V. Kryzhanovskaya
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1410/1/012001
Subject(s) - whispering gallery wave , materials science , optoelectronics , resonator , modulation (music) , laser , range (aeronautics) , realization (probability) , optics , signal (programming language) , physics , acoustics , computer science , composite material , programming language , statistics , mathematics
Results are presented on microlasers with quantum dot active region grown on either GaAs or Si substrates. The optical resonator of these lasers represents a microdisk supporting whispering-gallery modes with a Q-factor in excess of 30’000. When operating in continuous-wave mode without temperature stabilization, the microlasers have the threshold currents of mA-range with the minimal threshold current density of 250 A/cm 2 . Under direct small-signal modulation, the -3dB modulation bandwidths were measured to be above 6 GHz with a little effect of self-heating on the performance. The consumed electric power was estimated to be about 2 pJ/bit. The achieved performance is a significant breakthrough in realization of low-threshold high-speed temperatrure-stable operation of microlasers compared with the previously reported parameters for the devices of comparable sizes.