Open AccessCarrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation
Author(s) -
D. S. Arteev,
А. В. Сахаров,
W. V. Lundin,
D. A. Zakheim,
Е. Е. Заварин,
A. F. Tsatsulnikov
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1400/7/077009
Subject(s) - materials science , scattering , heterojunction , optoelectronics , phonon scattering , electron mobility , wide bandgap semiconductor , surface finish , surface roughness , transistor , fermi gas , condensed matter physics , electron , optics , composite material , physics , quantum mechanics , voltage , thermal conductivity
Calculational analysis of different scattering mechanisms of two-dimensional electron gas in AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN high-electron mobility transistors was carried out. It was found that the mobility of AlGaN-based structures at room temperature is mainly limited by inherent scattering mechanisms (namely, optical and acoustic phonon scattering), while the mobility in our InAlN-based structures is limited by the interface roughness scattering. The low-temperature mobility is found to be limited by the interface roughness scattering for both AlGaN- and InAlN-based structures.