Open AccessOn modelling optical parameters of InAs quantum dots for cascade GaInP / GaAs / Ge solar cells
Author(s) -
Alexander N. Panchak,
S. A. Mintairov,
M. A. Mintairov,
R. A. Salii,
М. Z. Shvarts,
N. A. Kalyuzhnyy
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1400/6/066058
Subject(s) - metalorganic vapour phase epitaxy , cascade , optoelectronics , quantum dot , materials science , gallium arsenide , solar cell , nanotechnology , epitaxy , chemistry , layer (electronics) , chromatography
Triple-junction solar cells InGaP/GaAs/Ge usually are manufactured using MOCVD technology. However, the potential of such structures is investigated in the laboratory on samples made using MBE. One of the ways to increase efficiency is the implanting of InAs quantum dots in GaAs cascade. In this paper the approaches to the mathematical modeling of Ga (In) As structures grown by MOCVD and MBE are studied.