Open AccessStudies of the thermovoltaic effect in semiconductors in the medium temperature range
Author(s) -
В. В. Каминский,
S. M. Soloviev,
Н. М. Судак,
М. И. Залдастанишвили,
Н. В. Шаренкова,
М. М. Казанин
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1400/6/066056
Subject(s) - semiconductor , impurity , materials science , voltage , atmospheric temperature range , range (aeronautics) , optoelectronics , condensed matter physics , engineering physics , electrical engineering , chemistry , physics , thermodynamics , engineering , composite material , organic chemistry
The possibilities of increasing the voltage generated due to the thermovoltaic effect in semiconductors by increasing the generation temperature are considered. It is shown on the example of SmS that an increase in voltage can be achieved by increasing the depth of impurity donor levels in semiconductors. The magnitude of the generated voltage is 0.15V in SmS/Sm 0.7 Eu 0.3 S as against 0.05 V in undoped SmS. The possibility of obtaining generation due to the thermovoltaic effect is also considered on a classical PbTe semiconductor operating in a higher-temperature region compared to SmS. Generation value of 0.11V was obtained.