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Antireflection coating for photovoltaic converters based on InP native oxide
Author(s) -
V. S. Epoletov,
A. E. Marichev,
Roy Levin,
B. V. Pushniy,
N. A. Talnishnikh
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1400/6/066039
Subject(s) - anti reflective coating , materials science , indium phosphide , coating , photovoltaic system , optoelectronics , converters , oxide , layer (electronics) , optics , reflection (computer programming) , nanotechnology , electrical engineering , voltage , metallurgy , gallium arsenide , computer science , physics , engineering , programming language
One of the interesting materials for the antireflective coatings of photovoltaic converters based on InP is the anodic oxide of indium phosphide. This material might be used as a first layer of a multilayer antireflection coating, as well as an independent single-layer antireflection coating. This paper deals with the study of the coating and research of its effect on the reflection coefficient from the InP surface.

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