Open AccessStrong Disorder in HgCdTe Studied with Optical Methods and X-Ray Diffraction
Author(s) -
D. A. Andryushchenko,
И. Н. Трапезникова,
N. L. Bazhenov,
M. A. Yagovkina,
K. D. Mynbaev,
V. G. Remesnik,
В. С. Варавин
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1400/6/066038
Subject(s) - photoluminescence , molecular beam epitaxy , annealing (glass) , diffraction , materials science , x ray crystallography , optoelectronics , epitaxy , crystallography , optics , analytical chemistry (journal) , chemistry , nanotechnology , physics , composite material , layer (electronics) , chromatography
Optical transmission, photoluminescence, and X-ray diffraction have been used for studying structural disorder in Hg 1-x Cd x Te ( x =0.3–0.4) films grown by Molecular-Beam Epitaxy on GaAs and Si substrates. According to all three methods, studied films immediately after the growth showed quite different scale of the disorder. After thermal annealing films showed similar optical properties, yet their structural properties remained different. It appears that the ability of Hg 1-x Cd x Te to gain good optical quality under annealing for considerably disordered initial material is not directly structure-related.