Open AccessStudy of GaAs oxidation in the low-current Townsend discharge
Author(s) -
А. N. Lodygin,
L. М. Portsel,
Leonid Snigirev,
D. A. Kirilenko,
Yu. A. Astrov
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1400/5/055042
Subject(s) - oxide , materials science , substrate (aquarium) , amorphous solid , transmission electron microscopy , analytical chemistry (journal) , electrical resistivity and conductivity , electrode , nanometre , optoelectronics , chemical engineering , nanotechnology , chemistry , composite material , metallurgy , crystallography , electrical engineering , oceanography , engineering , chromatography , geology
An anodic oxidation of GaAs substrates in a non-self-sustained low-current dc Townsend discharge is investigated. The process is carried out at the room temperature in a three-electrode microreactor filled by 98%Ar + 2%O 2 gas mixture. Investigation of the oxidation kinetics indicates that the formed oxide is characterized by a high resistivity, ρ ∼ 10 11 Ω·cm. It is demonstrated the application of the method for formation of oxide films with dimensions of tens of microns, which thickness is on the nanometer scale. Examination of the “GaAs substrate - oxide layer” interface using the high resolution transmission electron microscopy has revealed that the oxide is characterized by the amorphous structure.