Open AccessRaman spectroscopy estimation of the carrier concentration and the value of strain in monolayer graphene films grown on 4H-SiC
Author(s) -
Ilya A. Eliseyev,
V. Yu. Davydov,
А. Н. Смирнов,
M. O. Nestoklon,
P. A. Dementev,
С. П. Лебедев,
Alexander A. Lebedev,
Kirill A. Bokai,
Dmitry Yu. Usachov
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1400/5/055037
Subject(s) - graphene , raman spectroscopy , materials science , substrate (aquarium) , monolayer , fermi level , analytical chemistry (journal) , optoelectronics , photoemission spectroscopy , nanotechnology , nuclear magnetic resonance , electron , x ray photoelectron spectroscopy , optics , chemistry , physics , oceanography , chromatography , quantum mechanics , geology
Comprehensive study of high-quality monolayer graphene samples grown by thermal destruction of the Si-face of the 4 H -SiC substrate was carried out. Analysis of the data obtained by Raman spectroscopy and angle-resolved photoemission spectroscopy suggest the need to use the Fermi velocity in the graphene layer under study to obtain a correct estimate of the electron concentration and strain values using Raman data. This statement is valid not only for graphene on the SiC substrate, but for graphene on any other substrate as well, since the Fermi velocity in graphene depends on the dielectric constant of the substrate.