Open AccessStructural and morphological characteristics of GaN-based hybrid heterostructures grown on por-Si
Author(s) -
D. S. Zolotukhin,
A. S. Lenshin,
D. L. Goloshchapov,
A. M. Mizerov,
I. N. Arsentyev,
H. Leiste,
P. V. Seredin
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1400/5/055018
Subject(s) - heterojunction , materials science , molecular beam epitaxy , layer (electronics) , buffer (optical fiber) , optoelectronics , substrate (aquarium) , epitaxy , morphology (biology) , nanotechnology , computer science , telecommunications , oceanography , geology , biology , genetics
GaN/Si(111) heterostructures were grown by plasma-assisted molecular beam epitaxy on usual Si(111) substrates and compliant por-Si/Si(111) substrates without using AlN buffer layer. The positive influence of the high-temperature nitridation step, as well as the usage of a compliant substrate on crystalline quality, was confirmed. We got a crack-free 850-nm-thick GaN layer at room temperature by using the low-temperature GaN buffer layer with nanocolumnar morphology.