Open AccessThe effect of post-growth interruption on the formation of InGaAs/GaAs quantum dots obtained by MOVPE
Author(s) -
R. A. Salii,
S. A. Mintairov,
A. M. Nadtochiy,
V. N. Nevedomskiy,
N. A. Kalyuzhnyy
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1400/5/055015
Subject(s) - metalorganic vapour phase epitaxy , quantum dot , epitaxy , transmission electron microscopy , materials science , optoelectronics , gallium arsenide , deposition (geology) , nanotechnology , geology , paleontology , layer (electronics) , sediment
In this work, the study of formation regimes of In 0.8 Ga 0.2 As quantum dots on GaAs surface by metallorganic vapour-phase epitaxy has been carried out. The influence of post-growth interruption after the quantum dots deposition on the optical and physical properties of the formed objects has been investigated. It has been established that the interruption time of 2-5 seconds is optimal for the In 0.8 Ga 0.2 As/GaAs material system and growth conditions. For the chosen interruption time, the quality of formed quantum dots and their physical sizes were estimated using transmission electron microscopy: lateral size is 10 – 20 nm, height is not exceeding 5 nm and concentration is ∼9.8·10 10 cm −2 .