Open AccessResistive switching of CuO nanofibers embedded into hollow channels of SiO2 layer
Author(s) -
А. Н. Белов,
L. M. Pavlova,
V. I. Shevyakov,
G. N. Pestov,
А. А. Перевалов,
Yu. A. Demidov
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1400/5/055006
Subject(s) - materials science , layer (electronics) , nanofiber , substrate (aquarium) , porosity , silicon , resistive touchscreen , porous silicon , electronics , nanotechnology , optoelectronics , composite material , computer science , electrical engineering , oceanography , computer vision , geology , engineering
In this work, we have formed CuO memristive array embedded into porous SiO 2 layer. Such an approach would create synaptic system on silicon substrate using standard integrated electronics operations. It also provides control over the geometric parameters of artificial synapses, which determines their synaptic weights. The results of synaptic behavior have shown that the value of synaptic weights and currents are dependent on the thickness of the CuO filled SiO 2 porous layer.