Open AccessObservation of internal multiplication of nonequilibrium charge in irradiated silicon detectors at a temperature of 1.9K
Author(s) -
A. Shepelev,
V. Eremin,
E. Verbitskaya
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1400/4/044015
Subject(s) - physics , detector , large hadron collider , nuclear physics , particle detector , semiconductor , silicon , superfluid helium 4 , optoelectronics , semiconductor detector , radiation damage , radiation , computational physics , optics , atomic physics , helium
The development of modern high-energy physics is a powerful incentive for the progress of its experimental base. The use of semiconductor devices is standard for large accelerators and experimental setups at LHC, CERN, and perspective as sensors for monitoring beam loss and radiation fields in superconducting magnets and accelerating resonators operating at superfluid helium temperature (1.9 K). In these problems, the optimal type of radiation sensor is a compact silicon detector, the use of which in harsh radiation environment in combination with helium temperatures is a non-trivial task. The most important characteristics of such devices are the distribution of the electric field in the volume and the parameters of charge carrier transport, which determines the detector signal. The study considers specific kinetics of charge collection in silicon detectors at a temperature of 1.9 K in situ irradiated by relativistic hadrons.